Patent · US Active

Nanopore FET sensor with non-linear potential profile

US11367797B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Chang Chen · Heverlee, BE
Koen Martens · Wondelgem, BE
Pol Van Dorpe · Spalbeek, BE
Simone Severi · Leuven, BE

Key dates

Filing date	Jul 24, 2018
Grant date	Jun 21, 2022
Priority date	—
Expiry date	Jul 24, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/681
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.