Quantum dot light emitting devices

US11367835B2 · kind B2 · utility

Assignees

• DOW GLOBAL TECHNOLOGIES LLC · US
• Rohm and Haas Electronic Materials LLC · US

Inventors

• Anatoliy N. Sokolov · Midland, US
• Brian W. Goodfellow · Midland, US
• Robert David Grigg · Midland, US
• Liam P. Spencer · Lake Jackson, US
• John W. Kramer · Midland, US
• David D. Devore · Midland, US
• Sukrit Mukhopadhyay · Midland, US
• Peter Trefonas, III · Medway, US

Key dates

• Filing date: Jun 26, 2017
• Grant date: Jun 21, 2022
• Expiry date: Jul 5, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K50/171

Abstract

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).