Film layer analysis method and apparatus for electroluminescent device, and storage medium
US11367846B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 1, 2019 |
| Grant date | Jun 21, 2022 |
| Priority date | — |
| Expiry date | Jan 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/40
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure discloses a film layer analysis method for an electroluminescent device. The electroluminescent device includes an anode layer, an electroluminescent material layer, and a silver-bearing cathode layer that are sequentially laminated. The film layer analysis method includes stripping the silver-bearing cathode layer from the electroluminescent device by using a first ion sputtering source to obtain an analysis sample with the electroluminescent material layer exposed, and analyzing the exposed electroluminescent material layer by using a second ion sputtering source; wherein sputtering energy of the first ion sputtering source is greater than sputtering energy of the second ion sputtering source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.