Light-emitting layer suitable for bright luminescence

US11367848B2 · kind B2 · utility

Assignee

• CYNORA GmbH · DE

Inventors

• Thomas Baumann · Wettingen, CH
• Mathias Mydlak · Karlsruhe, DE
• Harald Flügge · Karlsruhe, DE
• Charlotte Flechon · Bruchsal, DE
• Georgios Liaptsis · Mannheim, DE

Key dates

• Filing date: Sep 7, 2015
• Grant date: Jun 21, 2022
• Expiry date: Feb 16, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

The present invention relates to a light-emitting layer B comprising a first emitter compound (a) having a non-exited state S0(a), a first excited singlet state S1(a) and a first excited triplet state T1(a); a second emitter compound (b) having a non-exited state S0(b), a first excited singlet state S1(b) and a first excited triplet state T1(b), wherein the energy level of S1(a) is higher than that of S1(b), the energy level of S1(b) is higher than that of T1(b) and wherein the rate of reverse intersystem crossing from T1(a) to S1(a) is higher than the rate of excitation energy transfer from S1(a) to S1(b) and/or the rate of excitation energy transfer from T1(a) to T1(b), and/or wherein the energy level of T1(b) is higher than that of T1(a). Further, the present invention also refers to an opto-electronic device comprising such light-emitting layer B and use thereof.