Silicon-rich silsesquioxane resins
US11370888B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jun 8, 2017 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G77/70
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A silsesquioxane resin, photoresist composition comprising the silsesquioxane resin and a photoacid generator, etching mask composition comprising the silsesquioxane resin, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same. The silsesquioxane resin comprises silicon-bonded hydrogen atom T-units and T-units having a silicon-bonded group of formula —CH2CH2CH2CO2C(R1a)3 or —CH(CH3)CH2CO2C(R1a)3, wherein each R1a is independently an unsubstituted (C1-C2)alkyl.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.