Microwave plasma reactor for manufacturing synthetic diamond material
US11371147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Sep 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.