Silicon photonic tunable device with thermo-optic channel
US11372269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2018 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/15
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A silicon photonic device is provided including a substrate; a passive silicon optical device, on the substrate; an electrically insulating cladding layer that encapsulates the optical device on the substrate, the cladding layer including a trench patterned therein, so as for the trench to at least partly cover the optical device, on a side of the latter, the trench filled with an electrically insulating, thermally conducting material, having a refractive index that is lower than a refractive index of silicon, thereby forming a heat conduction channel toward the optical device; and a heating element, in contact with the thermally conducting material. A method of operating such silicon photonic devices is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.