Semiconductor storage device
US11373703B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2021 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Feb 24, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
During a writing operation to change a resistance of a part of a variable resistance material film facing a first word line, the semiconductor storage device applies a first voltage to the first word line, applies a second voltage to a second word line, and applies a third voltage to a third word line. The first, second, and third word lines are stacked above a substrate. The second word line is adjacent to the first word line in the stacking direction. The third word line is not adjacent to the first word line in the stacking direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.