Semiconductor device structure and methods of forming the same
US11373971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Oct 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/1403
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.