Silicon-controlled-rectifier electrostatic protection structure and fabrication method thereof

US11373996B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Guang Chen · Tangxia, CN
• Jie Chen · Shanghai, CN

Key dates

• Filing date: Mar 19, 2020
• Grant date: Jun 28, 2022
• Expiry date: Apr 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A silicon-controlled-rectifier electrostatic protection structure and a fabrication method are provided. The structure includes: a substrate of P-type; a first N-type well, a second N-type well, and a third N-type well in the substrate; a first P-type doped region in the first N-type well; first N-type doped regions at sides of the first N-type well along a first direction; first gate structures on a portion of the first N-type doped regions and on a portion of the first P-type doped region; second gate structure groups at sides of the first N-type well along a second direction; second N-type doped regions in the substrate at sides of each second gate structure along the first direction; second P-type doped regions in the second N-type doped regions between adjacent second gate structure groups; and a third P-type doped region and a cathode N-type doped region in the substrate.