Semiconductor device
US11374107B2 · kind B2 · utility
2Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2020 |
| Grant date | Jun 28, 2022 |
| Priority date | — |
| Expiry date | Jun 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A high electron mobility transistor (HEMT) includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, source and drain structures over the second III-V compound layer and spaced apart from each other, a gate structure over the second III-V compound layer and between the source and drain structures, a gate field plate over the second III-V compound layer and between the gate structure and the drain structure, and an etch stop layer over the drain structure and spaced apart from the gate field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.