Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

US11377624B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Jhih Jheng Ke · Taoyuan, TW
• Andreas Klipp · Lambsheim, DE
• Yi-Ping Cheng · Taoyuan, TW
• Joannes Theodorus Valentinus Hoogboom · Ludwigshafen, DE

Key dates

• Filing date: Dec 5, 2018
• Grant date: Jul 5, 2022
• Expiry date: Dec 28, 2038

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C11D2111/22
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.