IGBT module reliability evaluation method and device based on bonding wire degradation
US11378613B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/275
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The disclosure discloses an IGBT module reliability evaluation method and device based on bonding wire degradation, which belong to the field of IGBT reliability evaluation. The realization of the method includes: obtaining a relationship between a IGBT chip conduction voltage drop Uces and an operating current Ic along with a chip junction temperature Tc; for an IGBT module under test, obtaining the conduction voltage drop Uces-c of the IGBT chip through the operating current Ic and the chip junction temperature Tc; obtaining an external conduction voltage drop Uces-m of the IGBT module by using a voltmeter; performing subtraction to obtain a voltage drop at a junction of a IGBT chip and a bonding wire, and combining the operating current to obtain a resistance at the junction; determining that the IGBT module has failed when the resistance at the junction increases to 5% of an equivalent impedance of the IGBT module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.