Patent · US Active

Low dark current radiation detector and method of making the same

US11378701B2 · kind B2 · utility

0Cited by

18References

14Claims

0Family size

Assignee

REDLEN TECHNOLOGIES, INC. · CA

Inventors

Saeid Taherion · Victoria, CA
Michael K. Jackson · Richmond, CA

Key dates

Filing date	Oct 6, 2020
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Oct 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/022
WIPO fieldEnvironmental technology
WIPO sectorChemistry

Abstract

A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.