Patent · US Active

Fabricating photonics structure light signal transmission regions

US11378739B2 · kind B2 · utility

1Cited by
114References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 20, 2020
Grant dateJul 5, 2022
Priority date
Expiry dateAug 20, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/4857
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.