Patent · US Active

Photonic devices and methods of fabrication thereof

US11378827B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

STMicroelectronics (Crolles 2) SAS · FR

Inventors

Stephane Monfray · Eybens, FR
Frederic Boeuf · Le Versoud, FR

Key dates

Filing date	Oct 29, 2020
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Dec 6, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG02F2201/063
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.