Semiconductor device including epitaxial region having an extended portion
US11380541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Sep 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.