Substrate processing apparatus, plurality of electrodes and method of manufacturing semiconductor device
US11380563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a technique, which includes: a reaction tube configured to form a process chamber in which a substrate is processed; an electrode fixing jig installed outside the reaction tube and configured to fix at least two electrodes for forming plasma in the process chamber; and a heating device installed outside the electrode fixing jig and configured to heat the reaction tube, wherein the at least two electrodes include at least one electrode to which a predetermined potential is applied and at least one electrode to which a reference potential is applied, and wherein a surface area of the at least one electrode to which the predetermined potential is applied is two times or more than a surface area of the at least one electrode to which the reference potential is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.