Semiconductor device including via structure with head and body portions
US11380606B2 · kind B2 · utility
1Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Jul 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.