Semiconductor device and method of fabricating the same
US11380690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2021 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Feb 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semicondcutor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.