Semiconductor device including a densified device isolation layer
US11380760B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Sep 22, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Oct 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.