Semiconductor device and manufacturing method thereof

US11380785B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Sheng-Kai Su · Shanghai, CN

Key dates

• Filing date: Oct 17, 2019
• Grant date: Jul 5, 2022
• Expiry date: Jan 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A semiconductor device includes a substrate, a gate structure, semimetallic source/drain structures, and source/drain contacts. The gate structure is over the substrate. The semimetallic source/drain structures are respectively on opposite sides of the gate structure, in which a band structure of each of the semimetallic source/drain structures has a valence band and a conduction band at different symmetry k-points. The source/drain contacts land on top surfaces of the semimetallic source/drain structures, respectively.