Thin-film device
US11380798B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jun 12, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Jun 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.