Patent · US Active

Light emitting diode device and backlight module

US11380827B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

FOSHAN NATIONSTAR OPTOELECTRONICS CO., LTD. · CN

Inventors

Fuhai Li · Longbeilingcun, CN
Penghui Dong · Lo Wu, CN
Dongzi Chen · Longbeilingcun, CN
Zhiguo XIE · Longbeilingcun, CN
Quan Xie · Longbeilingcun, CN

Key dates

Filing date	Jun 23, 2020
Grant date	Jul 5, 2022
Priority date	—
Expiry date	Jun 23, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/882
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Provided are a Light Emitting Diode (LED) device and a backlight module. The LED device includes a substrate, a chip, an encapsulation structure and a top reflective shielding layer; the chip is disposed on the substrate; the encapsulation structure covers the substrate and covers the chip; and the top reflective shielding layer is disposed on the encapsulation structure and located at a central position of an upper surface of the encapsulation structure, and covers a part of the upper surface of the encapsulation structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.