Method related to tuning the performance of superconducting nanowire single photon detector via ion implantation
US11380834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2018 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/442
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.