Patent · US Active

N-type dopants for efficient solar cells

US11380852B2 · kind B2 · utility

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Key dates

Filing dateDec 12, 2019
Grant dateJul 5, 2022
Priority date
Expiry dateDec 12, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K30/50
  • WIPO fieldOrganic fine chemistry
  • WIPO sectorChemistry

Abstract

Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10−2 S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI3) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.