Semiconductor laser and atomic oscillator
US11381058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2020 |
| Grant date | Jul 5, 2022 |
| Priority date | — |
| Expiry date | Jan 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W1>W3 and W2>W3, W1 is a width of the oxidized region of the first part, W2 is a width of the oxidized region of the second part, and W3 is a width of the oxidized region of the third part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.