Patent · US Active

Semiconductor devices and related methods

US11383970B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 9, 2019
Grant dateJul 12, 2022
Priority date
Expiry dateJul 9, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.