Patent · US Active

Sensor device and method of fabrication

US11383973B2 · kind B2 · utility

0Cited by
3References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 22, 2020
Grant dateJul 12, 2022
Priority date
Expiry dateAug 29, 2040

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0132
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A device includes a substrate, a first electrode formed on the substrate and a structural layer formed on the substrate. The structural layer includes a movable mass and a fixed portion, the movable mass being suspended above the substrate and the first electrode being interposed between the substrate and the movable mass. A second electrode is spaced apart from an upper surface of the movable mass by a gap and an anchor couples the second electrode to the fixed portion of the structural layer. A method entails integrating formation of the second electrode into a wafer process flow in which the first electrode and the structural layer are formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.