Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal
US11384451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2019 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Feb 7, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.