Sealed force sensor with etch stop layer
US11385108B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2018 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Nov 2, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.