Magnetic sensor array with dual TMR film
US11385305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2019 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Dec 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.