Device architecture
US11387050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2016 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Nov 10, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an optoelectronic device comprising: (a) a substrate comprising at least one first electrode, which at least one first electrode comprises a first electrode material, and at least one second electrode, which at least one second electrode comprises a second electrode material; and (b) a photoactive material disposed on the substrate, which photoactive material is in contact with the at least one first electrode and the at least one second electrode, wherein the substrate comprises: a layer of the first electrode material; and, disposed on the layer of the first electrode material, a layer of an insulating material, which layer of an insulating material partially covers the layer of the first electrode material; and, disposed on the layer of the insulating material, the second electrode material, and wherein the photoactive material comprises a crystalline compound, which crystalline compound comprises: one or more first cations selected from metal or metalloid cations; one or more second cations selected from Cs+′RB+, K+, NH4 + and organic cations; and one or more halide or chalcogenide anions. A substrate comprising a first and second electrode and …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.