Patent · US Active

Semiconductor device and method of manufacturing the same

US11387144B2 · kind B2 · utility

0Cited by
37References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 14, 2020
Grant dateJul 12, 2022
Priority date
Expiry dateOct 14, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises providing a layout comprising a first group that includes first and second patterns and a second group that includes third and fourth patterns, examining a bridge risk region in the layout, biasing one end of at least one of the first and third patterns, and forming first to fourth conductive patterns by respectively using the first to fourth patterns of the layout. The one end of at least one of the first and third patterns are adjacent to the bridge risk region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.