Semiconductor devices

US11387168B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Cheng-Lung Yang · Kaohsiung, TW
• Chih-Hung Su
• Chen-Shien Chen · Hsinchu, TW
• Hon-Lin Huang · Baoshan, TW
• Kun-Ming Tsai · Miaoli City, TW
• Wei-Je Lin · Hsinchu, TW

Key dates

• Filing date: Jul 9, 2020
• Grant date: Jul 12, 2022
• Expiry date: Sep 9, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/3213
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.