Semiconductor device and manufacturing method thereof
US11387232B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Jun 21, 2017 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate; a first gate stack disposed on the substrate; a second gate stack disposed on the substrate, wherein a metal component of the first gate stack is different from a metal component of the second gate stack; and a dielectric structure disposed over the substrate and between the first gate stack and the second gate stack, in which the dielectric structure is separated from the first gate stack and the second gate stack, and a distance between the dielectric structure and the first gate stack is substantially equal to a distance between the dielectric structure and the second gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.