Patent · US Active

Semiconductor device

US11387255B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 10, 2020
Grant dateJul 12, 2022
Priority date
Expiry dateAug 10, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D88/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed is a semiconductor device comprising a logic cell that is on a substrate and includes first and second active regions spaced apart from each other in a first direction, first and second active patterns that are respectively on the first and second active regions and extend in a second direction intersecting the first direction, gate electrodes extending in the first direction and running across the first and second active patterns, first connection lines that are in a first interlayer dielectric layer on the gate electrodes and extend parallel to each other in the second direction, and second connection lines that are in a second interlayer dielectric layer on the first interlayer dielectric layer and extend parallel to each other in the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.