Monolithic multi-chip-collective light-emitting diode
US11387275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2020 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Aug 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A high-power light-emitting diode is made by monolithically integrating multiple miniature light-emitting chips for improved operation voltage, light extraction efficiency and device yield. The light emitting diode includes a plurality of monolithically integrated mini chips, each of the mini chips has a mini n-contact formed on an n-type structure, a mini p-ohmic contact formed on a p-type structure, and a mini light emitting area defined by the mini p-ohmic contact. An n-bridge metal electrically connecting the mini n-contact of the mini chips to an n-bonding pad, the n-bridge metal is formed on the p-type structure and on sidewall of an opening in the p-type structure and on the active-region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.