Integrated circuit structure with non-gated well tap cell
US11387321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2020 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Jun 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method that includes receiving a semiconductor substrate that includes an integrated circuit (IC) cell and a well tap cell surrounding the IC cell; forming first fin active regions in the well tap cell and second fin active regions in the IC cell; forming a hard mask within the well tap cell, wherein the hard mask includes openings that define first source/drain (S/D) regions on the first fin active region of the well tap cell; forming gate stacks on the second fin active regions within the IC cell and absent from the well tap cell, wherein the gate stacks define second S/D regions on the second fin active regions; epitaxially growing first S/D features in the first S/D regions using the hard mask to constrain the epitaxially growing; and forming contacts landing on the first S/D features within the well tap cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.