Semiconductor device and method for manufacturing the same
US11387339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2018 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | Jan 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device and a method for manufacturing the same, and it relates to a field of semiconductor technology. The semiconductor device includes a substrate, a semiconductor layer, a dielectric layer, a source, a drain, and a gate, wherein a first face of the gate close to a side of the drain and close to the semiconductor layer has a first curved face. A gate trench corresponding to the gate is provided on the dielectric layer, a material of the gate being filled in the gate trench, and at least a part of a second face of the gate trench in contact with the gate is a second curved face which extends from a surface of the dielectric layer away from the semiconductor layer toward the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.