Reflective layers for light-emitting diodes

US11387389B2 · kind B2 · utility

Assignee

• CreeLED, Inc. · US

Inventors

• Michael Check · Holly Springs, US
• Kevin Haberern · Cary, US

Key dates

• Filing date: Jan 28, 2019
• Grant date: Jul 12, 2022
• Expiry date: Feb 23, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8312

Abstract

A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.