Electromechanically damped resonator devices and methods
US11387804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2020 |
| Grant date | Jul 12, 2022 |
| Priority date | — |
| Expiry date | May 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/2436
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Micro-machined acoustic and ultrasonic transducer (MAUT), particularly piezoelectric MAUT (PMAUT), performance tradeoffs have meant reasonable pixel depth resolution necessitated low quality factor (Q) transducers with power distributed over a large bandwidth yielding modest imaging ranges whilst high-Q transducers providing higher acoustic power output for longer imaging ranges exhibit extended ringing limiting pixel depth information. Accordingly, the inventors have established MAUTs supporting high-Q transducers for long-range high-resolution imaging by integrating electromechanical actuators (dampers) which can be selectively engaged to mechanically damped the MAUT. In several applications PMAUT arrays are required where all transducer elements should have almost identical resonant frequencies. However, prior art fabrication processes have tended to produce PMAUTs with large inter-chip and inter-wafer variances. Prior art methodologies to reduce inter-wafer process variations do not address intra-wafer or inter-chip process variations and accordingly the inventors have established manufacturing methodologies and design solutions to address these for the PMAUT resonant frequency…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.