Patent · US Active

Fabrication method for photonic devices

US11391891B2 · kind B2 · utility

1Cited by
33References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 1, 2021
Grant dateJul 19, 2022
Priority date
Expiry dateMar 1, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.