Active device substrate and method for manufacturing the same
US11392003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Nov 13, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136295
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active device substrate including a substrate, first metal grid wires, a first transparent conductive layer, a gate insulating layer, a semiconductor layer, a source, and a drain is provided. The first metal grid wires are located on the substrate. The first transparent conductive layer includes a scan line and a gate connected to the scan line. The scan line and/or the gate is directly connected to at least a part of the first metal grid wires. The gate insulating layer is located on the first transparent conductive layer. The semiconductor layer is located on the gate insulating layer and overlapped with the gate. The source and the drain are electrically connected to the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.