Method of manufacturing p-type gallium oxide by intrinsic doping, the thin film obtained from gallium oxide and its use
US11393680B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Apr 17, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Apr 17, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01G15/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive method provides for a method of p-type doping of Ga2O3 without adding impurity elements. Embodiments allow for significant simplification relative to extrinsic impurity element doping, and thus offers a reduced fabrication cost while being more temperature resistant since the defect dopants require higher temperatures to alter their impact. Certain methods disclosed provide for p-type gallium oxide formation via intrinsic defect doping, without requiring the addition of impurity elements which provide significant simplification relative to the existing state of the art approaches providing more temperature and radiation resistance, while offering a reduced fabrication cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.