Patent · US Active

Method of manipulating deposition rates of poly-silicon and method of manufacturing a SiGe HBT device

US11393684B2 · kind B2 · utility

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11Claims

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Assignee

Shanghai Huahong Grace Semiconductor Manufacturing Corporation · CN

Inventors

Zhenqi Li · San Ramon, US
Gim Chye Owe · Shanghai, CN
Ronghao Fu · Shanghai, CN

Key dates

Filing date	Jan 8, 2021
Grant date	Jul 19, 2022
Priority date	—
Expiry date	Jan 8, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D10/021
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manipulating deposition rates of poly-silicon and a method of manufacturing a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device are provided. The method of manipulating deposition rates of poly-silicon includes: providing a substrate, where a first surface of the substrate includes at least two of an oxide material region, a silicon nitride material region and a silicon material region; performing a first treatment on the first surface of the substrate, so as to manipulate the deposition rates of poly-silicon on different regions of the first surface to be closer; and forming a poly-silicon layer on the first surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.