Image sensor with photoelectric part and transfer gate on opposite sides of the substrate
US11393854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2019 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Mar 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.