Method for forming an image sensor
US11393866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Dec 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Various embodiments of the present disclosure are directed towards a method for forming an image sensor in which a device layer has high crystalline quality. According to some embodiments, a hard mask layer is deposited covering a substrate. A first etch is performed into the hard mask layer and the substrate to form a cavity. A second etch is performed to remove crystalline damage from the first etch and to laterally recess the substrate in the cavity so the hard mask layer overhangs the cavity. A sacrificial layer is formed lining cavity, a blanket ion implantation is performed into the substrate through the sacrificial layer, and the sacrificial layer is removed. An interlayer is epitaxially grown lining the cavity and having a top surface underlying the hard mask layer, and a device layer is epitaxially grown filling the cavity over the interlayer. A photodetector is formed in the device layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.