Image sensor and method for manufacturing deep trench and through-silicon via of the image sensor
US11393868B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an image sensor and a method for manufacturing deep trench and through-silicon via of the image sensor, wherein: providing a pixel silicon wafer, performing a silicon wafer thinning on a second side of the pixel silicon wafer; forming a deep trench on the the second side of the pixel silicon wafer; filling the deep trench with organic material; coating photoresist on the second side of the pixel silicon wafer; etching the second side of the pixel silicon wafer to form a through-silicon via according to the through-silicon via pattern; depositing a dielectric protective layer on the surface of the deep trench and the surface of the through-silicon via; filling the deep trench with organic material; coating the photoresist on the second side of the pixel silicon wafer; etching the second side of the pixel silicon wafer to form a contact hole according to the contact hole pattern, depositing a barrier layer on the surface of the deep trench and the surface of the through-silicon via, filling the deep trench with a first metal, and form a seed layer on the surface of the through-silicon via; filling the through-silicon via with the first metal. The prese…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.