Thin film transistor substrate and display apparatus including the same
US11393888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Jul 19, 2022 |
| Priority date | — |
| Expiry date | Sep 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
Abstract
A thin film transistor substrate includes a first semiconductor layer disposed on a substrate and having a first channel area, a first source area and a first drain area. A first gate electrode is disposed above the first semiconductor layer and overlaps the first channel area. A first electrode layer is disposed above the first gate electrode and electrically connects to at least one of the first source area and the first drain area. A second insulating layer is disposed between the first gate electrode and the first electrode layer. The second insulating layer includes an inorganic control layer and a first inorganic layer arranged on the inorganic control layer. The inorganic control layer has a lower density than a density of the first inorganic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.